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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2395 DESCRIPTION *With TO-220F package *Low collector saturation voltage *Wide SOA (safe operating area) *Complement to type 2SB1566 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS MAX 60 50 5 3 4.5 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=50A ;IE=0 IE=50A ;IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V;f=30MHz 100 MIN 50 60 5 2SD2395 TYP. MAX UNIT V V V 1.0 1.5 1.0 1.0 320 35 100 V V A A pF MHz hFE Classifications E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2395 Fig.2 Outline dimensions 3 |
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